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Description:

The IRF7316 is HEXFET@ power MOSFET.The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of powerapplications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Features of the IRF7316 are:(1)generation v technology; (2)ultra low on-resistance; (3)dual p-channel mosfet; (4)surface mount; (5)fully avalanche rated.Fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The absolute maximum ratings of the IRF7316 can be summarized as:(1)drain source voltage Vds:-30V;(2)gate source voltage Vgs:±20V;(3)pulsed drain current Idm:-30A;(4)continuous source current (diode conduction) Is:-2.5A;(4)single pulse avalanche energy Eas:140mJ;(5)avalanche current Iar:-2.8 A;(5)repetitive avalanche energy Ear:0.20mJ.